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Andrew P. Knights received his Ph.D. in 1994 in the area of surface material characterisation with beams of low energy positrons and electrons. His subsequent research took him first to the University of Western Ontario where he performed ground-breaking work on the generation and evolution of implant induced defects in silicon, and then to the University of Surrey as part of the EPSRC Icon Beam Centre, reaching novel fabrication processes for micro and opto-electronic materials. In 2000 he joined Bookham Technology and worked on a range of silicon-based, highly integrated photonic devices. He played a critical role in the development of the solid-state electronic optical variable attenuator (VOA); the multiplexer + VOA and the monolithically integrated optical detector. In 2003 he moved to McMaster University in Hamilton, Canada, where he holds a faculty position in the Department of Engineering Physics. He currently leads a research group working on the interaction of optical and electrical functionality in silicon-based structures. Dr. Knights has published extensively on semiconductor device design, fabrication and characterization and his work has been presented at international conferences on numerous occasions.
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