Through a series of critical reviews, this volume covers a range of topics from theory to materials issues, provides fundamental knowledge concerning imperfections in III/V compounds, and demonstrates the relevance of specific results for device performance and applications. The text examines microscopic models of structural and electronic defects in bulk and epitaxial III/V compounds. It provides an analysis of electronic properties in III/V compounds and discusses the influence of III/V compounds on device performance. The book should be of interest to students and researchers in materials science, electrical engineering, solid-state and device-oriented physics, surface science, and researchers, engineers and technicians in the semiconductor industry.
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Book Description Academic Press, St Louis, Missouri, U.S.A., 1993. Hardcover. Book Condition: Very Good Ex-Library Condition. Dust Jacket Condition: No dust Jacket. 498 pgs. Usual library markings. Clean pages, tight binding. CHAPTER TITLES: density-functional theory of sp-bonded defects in III/V semiconductors; el2 defect in gaas; defects relevant for compensation in semi-insulating gaas; local vibrational mode spectroscopy of defects in III/V compounds; transition metals in III/V compounds; dx and related defects in semiconductors; dislocations in iii/v compounds; deep level defects in the epitaxial iii/v materials; structural defects in epitaxial iii/v layers; defects in metal/iii/v heterostructures. Size: 8vo - over 7¾ - 9¾" tall. Book. Bookseller Inventory # B034072