FinFETs and Other Multi-Gate Transistors (Integrated Circuits and Systems)

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9780387717517: FinFETs and Other Multi-Gate Transistors (Integrated Circuits and Systems)

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

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FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.

The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.

FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.

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Published by Springer-Verlag New York Inc., United States (2008)
ISBN 10: 038771751X ISBN 13: 9780387717517
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Book Description Springer-Verlag New York Inc., United States, 2008. Hardback. Book Condition: New. 2008 ed.. Language: English . Brand New Book. This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. Bookseller Inventory # LIB9780387717517

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Published by Springer-Verlag New York Inc., United States (2008)
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Book Description Springer-Verlag New York Inc., United States, 2008. Hardback. Book Condition: New. 2008 ed.. Language: English . Brand New Book. This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. Bookseller Inventory # LIB9780387717517

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