Delta-doping of Semiconductors

ISBN 13: 9780521482882

Delta-doping of Semiconductors

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9780521482882: Delta-doping of Semiconductors

Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

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This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter setting out the basic concepts involved, fabrication techniques are discussed. in detail. The methods of characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices.

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E. F. SCHUBERT
Published by Cambridge University Press (1996)
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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 1996. Hardback. Book Condition: New. Language: English . Brand New Book. This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering. Bookseller Inventory # AAA9780521482882

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Published by CAMBRIDGE UNIVERSITY PRESS, United Kingdom (1996)
ISBN 10: 0521482887 ISBN 13: 9780521482882
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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 1996. Hardback. Book Condition: New. Language: English . Brand New Book. This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering. Bookseller Inventory # AAA9780521482882

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Book Description Cambridge University Press, 1996. Hardcover. Book Condition: New. book. Bookseller Inventory # M0521482887

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