Nanoscale MOS Transistors: Semi-Classical Transport and Applications

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9780521516846: Nanoscale MOS Transistors: Semi-Classical Transport and Applications
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Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results

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Book Description:

Provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. Written from an engineering standpoint, it covers all the latest topics and assumes minimal background in solid state physics and quantum mechanics.

About the Author:

David Esseni is an Associate Professor of Electronics at the University of Udine, Italy.

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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 2011. Hardback. Condition: New. New.. Language: English . Brand New Book. Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results. Seller Inventory # AAA9780521516846

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David Esseni, Pierpaolo Palestri, Luca Selmi
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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 2011. Hardback. Condition: New. New.. Language: English . Brand New Book. Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results. Seller Inventory # AAA9780521516846

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