Nanoscale MOS Transistors: Semi-Classical Transport and Applications

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9780521516846: Nanoscale MOS Transistors: Semi-Classical Transport and Applications

Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results

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Book Description:

Provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. Written from an engineering standpoint, it covers all the latest topics and assumes minimal background in solid state physics and quantum mechanics.

About the Author:

David Esseni is an Associate Professor of Electronics at the University of Udine, Italy.

Pierpaolo Palestri is an Associate Professor of Electronics at the University of Udine, Italy.

Luca Selmi is a Professor of Electronics at the University of Udine, Italy.

"About this title" may belong to another edition of this title.

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David Esseni, Pierpaolo Palestri, Luca Selmi
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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 2011. Hardback. Book Condition: New. New.. 248 x 172 mm. Language: English . Brand New Book. Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results. Bookseller Inventory # AAA9780521516846

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David Esseni, Pierpaolo Palestri, Luca Selmi
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Book Description CAMBRIDGE UNIVERSITY PRESS, United Kingdom, 2011. Hardback. Book Condition: New. New.. 248 x 172 mm. Language: English . Brand New Book. Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results. Bookseller Inventory # AAA9780521516846

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