Wide Band Gap Electronic Materials (Nato Science Partnership Subseries: 3)

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9780792334057: Wide Band Gap Electronic Materials (Nato Science Partnership Subseries: 3)
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Proceedings of the NATO Advanced Research Workshop on `Wide Band Gap Electronic Materials -- Diamond, Aluminum Nitride and Boron Nitride', Minsk, Belarus, May 4--6, 1994

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Editor-M.A. Prelas; Editor-Peter Gielisse; Editor-Galina Popovici; Editor-Boris V. Spitsyn; Editor-Tina Stacy
Published by Springer (1995)
ISBN 10: 0792334051 ISBN 13: 9780792334057
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Book Description Springer, 1995. Hardcover. Condition: New. Seller Inventory # SONG0792334051

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Published by Springer, Netherlands (1995)
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Book Description Springer, Netherlands, 1995. Hardback. Condition: New. 1995 ed.. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for high tech nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed. Seller Inventory # LIE9780792334057

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Mark A. Prelas
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Book Description Kluwer Academic Publishers, 1995. HRD. Condition: New. New Book. Delivered from our US warehouse in 10 to 14 business days. THIS BOOK IS PRINTED ON DEMAND.Established seller since 2000. Seller Inventory # IP-9780792334057

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Prelas, Mark A.
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Book Description Springer, 2016. Paperback. Condition: New. PRINT ON DEMAND Book; New; Publication Year 2016; Not Signed; Fast Shipping from the UK. No. book. Seller Inventory # ria9780792334057_lsuk

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Mark A. Prelas
Published by Kluwer Academic Publishers (1995)
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Book Description Kluwer Academic Publishers, 1995. HRD. Condition: New. New Book.Shipped from US within 10 to 14 business days.THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # IP-9780792334057

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MARK A. PRELAS
Published by Springer (1995)
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Book Description Springer, 1995. Hardback. Condition: NEW. 9780792334057 This listing is a new book, a title currently in-print which we order directly and immediately from the publisher. For all enquiries, please contact Herb Tandree Philosophy Books directly - customer service is our primary goal. Seller Inventory # HTANDREE0280202

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Published by Springer, Netherlands (1995)
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Book Description Springer, Netherlands, 1995. Hardback. Condition: New. 1995 ed.. Language: English . Brand New Book ***** Print on Demand *****. Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for high tech nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed. Seller Inventory # APC9780792334057

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Published by Springer (1995)
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Book Description Springer, 1995. Condition: New. This item is printed on demand for shipment within 3 working days. Seller Inventory # LP9780792334057

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Published by Springer, Netherlands (1995)
ISBN 10: 0792334051 ISBN 13: 9780792334057
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Book Description Springer, Netherlands, 1995. Hardback. Condition: New. 1995 ed.. Language: English . Brand New Book ***** Print on Demand *****.Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for high tech nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices,piezodevices, and electroluminescencedevices were discussed. Seller Inventory # APC9780792334057

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Published by Springer
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Book Description Springer. Hardcover. Condition: New. 531 pages. Dimensions: 9.2in. x 6.1in. x 1.2in.Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond. One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Hardcover. Seller Inventory # 9780792334057

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