Items related to Fundamental Aspects of Ultrathin Dielectrics on Si-based...
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) - Softcover
Synopsis
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
"synopsis" may belong to another edition of this title.
Search results for Fundamental Aspects of Ultrathin Dielectrics on Si-based...
Stock Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47)
Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # ABLIING23Feb2416190182817
Quantity: Over 20 available
Stock Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. In. Seller Inventory # ria9780792350088_new
Quantity: Over 20 available
Seller Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Published by
Springer, Springer Mär 1998, 1998
ISBN 10: 0792350081
ISBN 13: 9780792350088
New
Taschenbuch
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. 520 pp. Englisch. Seller Inventory # 9780792350088
Quantity: 2 available
Seller Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Seller: preigu, Osnabrück, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices | Eric Garfunkel (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 1998 | Springer | EAN 9780792350088 | Verantwortliche Person für die EU: Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, productsafety[at]springernature[dot]com | Anbieter: preigu. Seller Inventory # 102550496
Quantity: 5 available
Stock Image
Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices
Published by
Kluwer Academic Publishers, 1998
ISBN 10: 0792350081
ISBN 13: 9780792350088
New
Softcover
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Ireland
Seller rating 5 out of 5 stars
Condition: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590. . 1998. Softcover reprint of the original 1st ed. 1998. Paperback. . . . . Seller Inventory # V9780792350088
Quantity: 15 available
Seller Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Published by
Springer Netherlands, Springer Netherlands Mär 1998, 1998
ISBN 10: 0792350081
ISBN 13: 9780792350088
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of 520 pp. Englisch. Seller Inventory # 9780792350088
Quantity: 1 available
Seller Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Seller: moluna, Greven, Germany
Seller rating 4 out of 5 stars
Condition: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 An extrapolation of ULSI scaling trends indicates . Seller Inventory # 5968426
Quantity: Over 20 available
Seller Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Seller Inventory # 9780792350088
Quantity: 1 available
Stock Image
Fundamental Aspects of Ultrathin Dielectrics on SI-Based Devices
Published by
Kluwer Academic Publishers, 1998
ISBN 10: 0792350081
ISBN 13: 9780792350088
New
Softcover
Seller: Kennys Bookstore, Olney, MD, U.S.A.
Seller rating 5 out of 5 stars
Condition: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 26. Weight in Grams: 1590. . 1998. Softcover reprint of the original 1st ed. 1998. Paperback. . . . . Books ship from the US and Ireland. Seller Inventory # V9780792350088
Quantity: 15 available
Stock Image
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Seller: Books Puddle, New York, NY, U.S.A.
Seller rating 4 out of 5 stars
Condition: New. pp. 520. Seller Inventory # 26551048
Quantity: 4 available