Quantum Semiconductor Devices and Technologies (Electronic Materials Series)

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9780792377481: Quantum Semiconductor Devices and Technologies (Electronic Materials Series)

stacked QD structure and is useful for examining the possibility of all­ optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech­ nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre­ control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.

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Quantum Semiconductor Devices and Technologies will be of interest to all working in this important and rapidly developing field. It introduces the fundamentals along with current topics ranging from quantum nanocircuits and the potential applications of self-formed quantum dot structures, through the use of MOVPE to produce quantum structured semiconductors, lithography and patterning and the structural characterization of self-organized Ge-islands.

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Book Description Kluwer Academic Publishers, United States, 2000. Hardback. Book Condition: New. 2000 ed.. 241 x 157 mm. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. stacked QD structure and is useful for examining the possibility of all- optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech- nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre- control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics.The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas. Bookseller Inventory # LIE9780792377481

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Book Description Kluwer Academic Publishers, United States, 2000. Hardback. Book Condition: New. 2000 ed.. 241 x 157 mm. Language: English . Brand New Book ***** Print on Demand *****. stacked QD structure and is useful for examining the possibility of all- optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech- nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre- control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics.The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas. Bookseller Inventory # APC9780792377481

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Published by Kluwer Academic Publishers, United States (2000)
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Book Description Kluwer Academic Publishers, United States, 2000. Hardback. Book Condition: New. 2000 ed.. 241 x 157 mm. Language: English . Brand New Book ***** Print on Demand *****.stacked QD structure and is useful for examining the possibility of all- optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech- nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre- control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics.The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas. Bookseller Inventory # APC9780792377481

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