Microscopic Mechanism of the Staebler-Wronski Effect in a-Si Films and High-Efficiency Solar Cells

 
9781249133209: Microscopic Mechanism of the Staebler-Wronski Effect in a-Si Films and High-Efficiency Solar Cells
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In high growth rate (= 50 ?/s) HW-CVD a-Si:H films, for the first time, we show gaseous molecules in nanovoids (~2% volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and Ts of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and Ea et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation decreases from 10? to 8?. For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed Voc enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/?c-Si/M devices after current forming.

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Published by Bibliogov, United States (2012)
ISBN 10: 1249133203 ISBN 13: 9781249133209
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Book Description Bibliogov, United States, 2012. Paperback. Condition: New. Language: English . Brand New Book ***** Print on Demand *****. In high growth rate (= 50 ?/s) HW-CVD a-Si: H films, for the first time, we show gaseous molecules in nanovoids ( 2 volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and Ts of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and Ea et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation decreases from 10? to 8? For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed Voc enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/?c-Si/M devices after current forming. Seller Inventory # AAV9781249133209

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Book Description BiblioGov. Paperback. Condition: New. This item is printed on demand. 78 pages. Dimensions: 9.7in. x 7.4in. x 0.2in.In high growth rate ( 50 s) HW-CVD a-Si: H films, for the first time, we show gaseous molecules in nanovoids (2 volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and Ts of both HW- and PE-CVD films using IR, Raman, PL, CPMPDS and Ea et al. We found not only the c-Si volume fraction but also the g. b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation decreases from 10 to 8. For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g. b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed Voc enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in Mc-SiM devices after current forming. This item ships from La Vergne,TN. Paperback. Seller Inventory # 9781249133209

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Published by Bibliogov, United States (2012)
ISBN 10: 1249133203 ISBN 13: 9781249133209
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Book Description Bibliogov, United States, 2012. Paperback. Condition: New. Language: English . Brand New Book ***** Print on Demand *****.In high growth rate (= 50 ?/s) HW-CVD a-Si: H films, for the first time, we show gaseous molecules in nanovoids ( 2 volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and Ts of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and Ea et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation decreases from 10? to 8? For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed Voc enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/?c-Si/M devices after current forming. Seller Inventory # AAV9781249133209

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