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Synopsis
In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.
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Plasma Charging Damage (eng)
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Plasma Charging Damage
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Springer London Aug 2012, 2012
ISBN 10: 1447110625
ISBN 13: 9781447110620
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits. 364 pp. Englisch. Seller Inventory # 9781447110620
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Plasma Charging Damage
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The only book of its kind - the only competition on subject matter comes from a Japanese language text to which this author is also a contributorIt is neither as coherent nor as comprehensive as the current textThe books readership runs the whole ga. Seller Inventory # 4183947
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Plasma Charging Damage
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Plasma Charging Damage
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Plasma Charging Damage
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Plasma Charging Damage
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Springer London, Springer London Aug 2012, 2012
ISBN 10: 1447110625
ISBN 13: 9781447110620
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 364 pp. Englisch. Seller Inventory # 9781447110620
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Plasma Charging Damage
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Condition: New. Print on Demand pp. 364 327 Figures, 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam. Seller Inventory # 51009636
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Plasma Charging Damage
Published by
Springer London, Springer London, 2012
ISBN 10: 1447110625
ISBN 13: 9781447110620
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Seller: AHA-BUCH GmbH, Einbeck, Germany
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits. Seller Inventory # 9781447110620
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Plasma Charging Damage
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Condition: New. PRINT ON DEMAND pp. 364. Seller Inventory # 1858582961
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