Flash Memories

ISBN 13: 9781461372783

Flash Memories

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9781461372783: Flash Memories
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A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran­ sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler­ Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro­ grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

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9780792384878: Flash Memories

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ISBN 10:  0792384873 ISBN 13:  9780792384878
Publisher: Springer, 1999
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Book Description Springer-Verlag New York Inc., United States, 2014. Paperback. Condition: New. 1999 ed.. Language: English . Brand New Book ***** Print on Demand *****.A Flash memory is a Non Volatile Memory (NVM) whose unit cells are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran- sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler- Nordheim tunneling. This is the unit cell of EPROM (Electrically Pro- grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. Seller Inventory # AAV9781461372783

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Book Description Springer-Verlag New York Inc., United States, 2014. Paperback. Condition: New. 1999 ed.. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. A Flash memory is a Non Volatile Memory (NVM) whose unit cells are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran- sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler- Nordheim tunneling. This is the unit cell of EPROM (Electrically Pro- grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. Seller Inventory # LIE9781461372783

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Book Description Springer-Verlag New York Inc., United States, 2014. Paperback. Condition: New. 1999 ed.. Language: English . Brand New Book ***** Print on Demand *****. A Flash memory is a Non Volatile Memory (NVM) whose unit cells are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran- sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler- Nordheim tunneling. This is the unit cell of EPROM (Electrically Pro- grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5]. Seller Inventory # AAV9781461372783

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