Mosfet Technologies: A Comprehensive Bibliography (IFI Data Base Library)

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9781468461220: Mosfet Technologies: A Comprehensive Bibliography (IFI Data Base Library)

The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc­ cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.

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Book Description Springer-Verlag New York Inc., United States, 2012. Paperback. Book Condition: New. Language: English . Brand New Book ***** Print on Demand *****.The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc- cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET s. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET s more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET s. Softcover reprint of the original 1st ed. 1980. Bookseller Inventory # AAV9781468461220

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Book Description Springer-Verlag New York Inc., United States, 2012. Paperback. Book Condition: New. Language: English . Brand New Book ***** Print on Demand *****. The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc- cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET s. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET s more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET s. Softcover reprint of the original 1st ed. 1980. Bookseller Inventory # AAV9781468461220

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Book Description Springer, 2012. PAP. Book Condition: New. New Book. Shipped from US within 10 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bookseller Inventory # IQ-9781468461220

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Book Description Springer, 2012. PAP. Book Condition: New. New Book. Delivered from our UK warehouse in 3 to 5 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bookseller Inventory # LQ-9781468461220

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Book Description Springer-Verlag New York Inc., United States, 2012. Paperback. Book Condition: New. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc- cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET s. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET s more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET s. Softcover reprint of the original 1st ed. 1980. Bookseller Inventory # LIE9781468461220

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Book Description Springer. Paperback. Book Condition: New. Paperback. 392 pages. Dimensions: 10.0in. x 7.0in. x 0.9in.The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFETs. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFETs more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FETs. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Paperback. Bookseller Inventory # 9781468461220

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