Items related to Semiconductor Equations
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
"synopsis" may belong to another edition of this title.
- PublisherSpringer
- Publication date1990
- ISBN 10 3211821570
- ISBN 13 9783211821572
- BindingHardcover
- Number of pages258
Buy New
Learn more about this copy
US$ 64.31
Shipping:
US$ 3.99
Within U.S.A.
Top Search Results from the AbeBooks Marketplace
Stock Image
Semiconductor Equations
Seller:
Rating
Book Description Condition: New. pp. 268. Seller Inventory # 261776173
Buy New
US$ 64.31
Convert currency
Stock Image
Semiconductor Equations
Seller:
Rating
Book Description Condition: New. pp. 268 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam. Seller Inventory # 7120370
Buy New
US$ 67.45
Convert currency
Seller Image
Semiconductor Equations by Markowich, Peter A., Ringhofer, Christian A., Schmeiser, Christian [Hardcover ]
Seller:
Rating
Book Description Hardcover. Condition: new. Seller Inventory # 9783211821572
Buy New
US$ 112.88
Convert currency
Stock Image
Semiconductor Equations
Seller:
Rating
Book Description Condition: New. Seller Inventory # ABLIING23Mar3113020084936
Buy New
US$ 116.18
Convert currency
Stock Image
Semiconductor Equations
Published by
Springer
(1990)
ISBN 10: 3211821570
ISBN 13: 9783211821572
New
Hardcover
Quantity: > 20
Seller:
Rating
Book Description Condition: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book. Seller Inventory # ria9783211821572_lsuk
Buy New
US$ 123.51
Convert currency
Seller Image
Semiconductor Equations
Published by
Springer Vienna Jun 1990
(1990)
ISBN 10: 3211821570
ISBN 13: 9783211821572
New
Hardcover
Quantity: 2
Seller:
Rating
Book Description Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices. 268 pp. Englisch. Seller Inventory # 9783211821572
Buy New
US$ 117.95
Convert currency
Seller Image
Semiconductor Equations
Published by
Springer Vienna
(1990)
ISBN 10: 3211821570
ISBN 13: 9783211821572
New
Hardcover
Quantity: > 20
Seller:
Rating
Book Description Condition: New. Seller Inventory # 4488612
Buy New
US$ 101.72
Convert currency
Seller Image
Semiconductor Equations
Published by
Springer Vienna
(1990)
ISBN 10: 3211821570
ISBN 13: 9783211821572
New
Hardcover
Quantity: 1
Seller:
Rating
Book Description Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices. Seller Inventory # 9783211821572
Buy New
US$ 122.44
Convert currency