Nitrogen incorporation into high-k gate dielectrics: Evaluation of nitrogen incorporation effects in HfO2 and HfSiO gate dielectrics for improved MOSFET performance

 
9783639157055: Nitrogen incorporation into high-k gate dielectrics: Evaluation of nitrogen incorporation effects in HfO2 and HfSiO gate dielectrics for improved MOSFET performance
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What effects would take place by doping nitrogen into high-k gate dielectric like SiON? In this study, nitrogen incorporation in Hf-based gate dielectric (HfO2 and HfSiO) has been studied. Thermal nitridation of Si prior to HfO2 deposition is one of the methods for incorporating N. However, it resulted in degraded interface. Thus, top nitridation was explored to prevent oxygen and boron penetration into Si substrate while maintaining high-k/Si interface. As a result, thermal stability and immunity to boron diffusion were improved. In addition, 2 times higher drive current was further enhanced by applying high temperature forming gas annealing at 600C. To achieve higher nitrogen concentration at the top, HfSiON (k~12-16) was used. None of nitrogen in the upper part of the dielectric diffused to the interface of HfO2 and Si substrate for anneals up to 800C. Even higher nitrogen concentration at the top was achieved by NH3 annealing of the gate dielectric which resulted in EOT < 10 Å. The experimental results of this study suggest that nitrogen profile engineering for high-k materials is a promising technique to improve MOSFET performance.

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Hag-Ju Cho was born in Korea. He received M.S. degree in Physics at Seoul National University and Ph.D. degree in Electrical and Computer Engineering at the University of Texas at Austin in 1994 and 2003, respectively. He joined Samsung Electronics in 1994 and has researched high-k oxides and metal gates for memory and logic applications.

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Book Description Condition: New. Publisher/Verlag: VDM Verlag Dr. Müller | Evaluation of nitrogen incorporation effects in HfO2 and HfSiO gate dielectrics for improved MOSFET performance | What effects would take place by doping nitrogen into high-k gate dielectric like SiON? In this study, nitrogen incorporation in Hf-based gate dielectric (HfO2 and HfSiO) has been studied. Thermal nitridation of Si prior to HfO2 deposition is one of the methods for incorporating N. However, it resulted in degraded interface. Thus, topnitridation was explored to prevent oxygen and boron penetration into Si substrate whilemaintaining high-k/Si interface. As a result, thermal stability and immunity to boron diffusion were improved. In addition, 2 times higher drive current was further enhanced by applying high temperature forming gas annealing at 600C. To achieve higher nitrogen concentration at the top, HfSiON (k~12-16) was used. None of nitrogen in the upper part of the dielectric diffused to the interface of HfO2 and Si substrate for anneals up to 800C. Even higher nitrogen concentration at the top was achieved by NH3 annealing of the gate dielectric which resulted in EOT 10 Å. The experimental results of this study suggest that nitrogen profile engineering for high-k materials is a promising technique to improve MOSFET performance. | Format: Paperback | Language/Sprache: english | 246 gr | 176 pp. Seller Inventory # K9783639157055

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Book Description VDM Verlag Mai 2009, 2009. Taschenbuch. Condition: Neu. Neuware - What effects would take place by doping nitrogen into high-k gate dielectric like SiON In this study, nitrogen incorporation in Hf-based gate dielectric (HfO2 and HfSiO) has been studied. Thermal nitridation of Si prior to HfO2 deposition is one of the methods for incorporating N. However, it resulted in degraded interface. Thus, top nitridation was explored to prevent oxygen and boron penetration into Si substrate while maintaining high-k/Si interface. As a result, thermal stability and immunity to boron diffusion were improved. In addition, 2 times higher drive current was further enhanced by applying high temperature forming gas annealing at 600C. To achieve higher nitrogen concentration at the top, HfSiON (k~12-16) was used. None of nitrogen in the upper part of the dielectric diffused to the interface of HfO2 and Si substrate for anneals up to 800C. Even higher nitrogen concentration at the top was achieved by NH3 annealing of the gate dielectric which resulted in EOT 10 Å. The experimental results of this study suggest that nitrogen profile engineering for high-k materials is a promising technique to improve MOSFET performance. 176 pp. Englisch. Seller Inventory # 9783639157055

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Book Description VDM Verlag Mai 2009, 2009. Taschenbuch. Condition: Neu. Neuware - What effects would take place by doping nitrogen into high-k gate dielectric like SiON In this study, nitrogen incorporation in Hf-based gate dielectric (HfO2 and HfSiO) has been studied. Thermal nitridation of Si prior to HfO2 deposition is one of the methods for incorporating N. However, it resulted in degraded interface. Thus, top nitridation was explored to prevent oxygen and boron penetration into Si substrate while maintaining high-k/Si interface. As a result, thermal stability and immunity to boron diffusion were improved. In addition, 2 times higher drive current was further enhanced by applying high temperature forming gas annealing at 600C. To achieve higher nitrogen concentration at the top, HfSiON (k~12-16) was used. None of nitrogen in the upper part of the dielectric diffused to the interface of HfO2 and Si substrate for anneals up to 800C. Even higher nitrogen concentration at the top was achieved by NH3 annealing of the gate dielectric which resulted in EOT 10 Å. The experimental results of this study suggest that nitrogen profile engineering for high-k materials is a promising technique to improve MOSFET performance. 176 pp. Englisch. Seller Inventory # 9783639157055

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