An SOI LDMOS For Better Switch Application: Electron Devices

 
9783659406751: An SOI LDMOS For Better Switch Application: Electron Devices
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This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.

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Arindam BiswasB.Tech, M.Tech (CU), PhD Submitted (NIT Dgp)Research Interests:Electron Transport, Non Linear Optics, Electron Devices.Publication: Journals and Conferences- 40 Book: 2

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Book Description LAP Lambert Academic Publishing Jun 2013, 2013. Taschenbuch. Condition: Neu. Neuware - This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. 84 pp. Englisch. Seller Inventory # 9783659406751

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Book Description LAP Lambert Academic Publishing Jun 2013, 2013. Taschenbuch. Condition: Neu. Neuware - This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. 84 pp. Englisch. Seller Inventory # 9783659406751

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Book Description LAP Lambert Academic Publishing. Paperback. Condition: New. 84 pages. Dimensions: 8.7in. x 5.9in. x 0.2in.This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Paperback. Seller Inventory # 9783659406751

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Book Description LAP Lambert Academic Publishing, United States, 2013. Paperback. Condition: New. Language: English . Brand New Book. This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. Seller Inventory # KNV9783659406751

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Book Description LAP Lambert Academic Publishing Jun 2013, 2013. Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Neuware - This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. 84 pp. Englisch. Seller Inventory # 9783659406751

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