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This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.
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Arindam BiswasB.Tech, M.Tech (CU), PhD Submitted (NIT Dgp)Research Interests:Electron Transport, Non Linear Optics, Electron Devices.Publication: Journals and Conferences- 40 Book: 2
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- PublisherLAP LAMBERT Academic Publishing
- Publication date2013
- ISBN 10 3659406759
- ISBN 13 9783659406751
- BindingPaperback
- Number of pages84
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An SOI LDMOS For Better Switch Application: Electron Devices
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An SOI LDMOS For Better Switch Application : Electron Devices
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Book Description Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. Seller Inventory # 9783659406751
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Book Description Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. 84 pp. Englisch. Seller Inventory # 9783659406751
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An SOI LDMOS For Better Switch Application Electron Devices
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Book Description Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Biswas ArindamArindam BiswasB.Tech, M.Tech (CU), PhD Submitted (NIT Dgp)Research Interests:Electron Transport, Non Linear Optics, Electron Devices.Publication: Journals and Conferences- 40 Book: 2This book is proposed. Seller Inventory # 5154233
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