Single Electron Spin Measurements in Submicron Si MOS-FETs: Random Telegraph Signal, Single Electron Spin Resonance

 
9783836493758: Single Electron Spin Measurements in Submicron Si MOS-FETs: Random Telegraph Signal, Single Electron Spin Resonance
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Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random telegraph signal (RTS), the stochastic switching of the channel conductivity due to the trapping of single channel electrons by the defect. We also have, for the first time, studied the spin properties of these individual defects. By investigating the dependence of RTS statistics on a plane magnetic field, we have identified spin states of a single electron on a defect. Using microwave radiation of frequencies ranging from 16 - 50 GHz, we have detected magnetic resonance of a single electron spin. The trap occupancy or channel current changes at the electron spin resonance condition, with a g-factor of 2.02+-0.015.

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Ph.D. in Experimental Condensed Matter Physics at University of California, Los Angeles.

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Book Description Condition: New. Publisher/Verlag: VDM Verlag Dr. Müller | Random Telegraph Signal, Single Electron Spin Resonance | Presented is our measurements of a single electronicspin in the gate oxide of submicron-size siliconfield effect transistors. Defects near the siliconand silicon dioxide interface have profound effectson the transistor conduction properties. For asubmicron transistor, there might be only oneisolated trap state that is within a proper tunnelingdistance regarding to both the coordinate and energy.We have studied the statistics and dynamics ofindividual defects extensively by random telegraphsignal (RTS), the stochastic switching of the channelconductivity due to the trapping of single channelelectrons by the defect. We also have, for the firsttime, studied the spin properties of these individualdefects. By investigating the dependence of RTSstatistics on aplane magnetic field, we have identified spin statesof a single electron on a defect. Using microwaveradiation of frequencies ranging from 16 - 50 GHz, wehave detected magnetic resonance of a single electronspin. The trap occupancy or channel current changesat the electron spin resonance condition, with ag-factor of 2.02+-0.015. | Format: Paperback | Language/Sprache: english | 124 pp. Seller Inventory # K9783836493758

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Book Description VDM Verlag, Germany, 2008. Paperback. Condition: New. Language: English. Brand new Book. Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random telegraph signal (RTS), the stochastic switching of the channel conductivity due to the trapping of single channel electrons by the defect. We also have, for the first time, studied the spin properties of these individual defects. By investigating the dependence of RTS statistics on a plane magnetic field, we have identified spin states of a single electron on a defect. Using microwave radiation of frequencies ranging from 16 - 50 GHz, we have detected magnetic resonance of a single electron spin. The trap occupancy or channel current changes at the electron spin resonance condition, with a g-factor of 2.02]-0.015. Seller Inventory # AAV9783836493758

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Book Description VDM Verlag Dez 2008, 2008. Taschenbuch. Condition: Neu. Neuware - Presented is our measurements of a single electronic 124 pp. Englisch. Seller Inventory # 9783836493758

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Book Description VDM Verlag Dr. Müller. Paperback. Condition: New. 124 pages. Dimensions: 8.7in. x 5.9in. x 0.3in.Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random telegraph signal (RTS), the stochastic switching of the channel conductivity due to the trapping of single channel electrons by the defect. We also have, for the first time, studied the spin properties of these individual defects. By investigating the dependence of RTS statistics on a plane magnetic field, we have identified spin states of a single electron on a defect. Using microwave radiation of frequencies ranging from 16 - 50 GHz, we have detected magnetic resonance of a single electron spin. The trap occupancy or channel current changes at the electron spin resonance condition, with a g-factor of 2. 02-0. 015. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Paperback. Seller Inventory # 9783836493758

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