Thin Films of Multiferroic BiCoO3: by Atomic Layer Deposition

 
9783838326511: Thin Films of Multiferroic BiCoO3: by Atomic Layer Deposition

The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of ?-Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented.

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Gandrud, Knut Bjarne
ISBN 10: 3838326512 ISBN 13: 9783838326511
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Book Description Book Condition: New. Publisher/Verlag: LAP Lambert Academic Publishing | by Atomic Layer Deposition | The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of -Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented. | Format: Paperback | Language/Sprache: english | 144 pp. Bookseller Inventory # K9783838326511

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Knut Bjarne Gandrud
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Book Description LAP Lambert Acad. Publ. Apr 2010, 2010. Taschenbuch. Book Condition: Neu. Neuware - The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of -Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented. 144 pp. Englisch. Bookseller Inventory # 9783838326511

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Knut Bjarne Gandrud
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ISBN 10: 3838326512 ISBN 13: 9783838326511
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Book Description LAP Lambert Acad. Publ. Apr 2010, 2010. Taschenbuch. Book Condition: Neu. Neuware - The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of -Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented. 144 pp. Englisch. Bookseller Inventory # 9783838326511

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Book Description LAP Lambert Acad. Publ. Apr 2010, 2010. Taschenbuch. Book Condition: Neu. This item is printed on demand - Print on Demand Neuware - The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of -Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented. 144 pp. Englisch. Bookseller Inventory # 9783838326511

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Book Description LAP Lambert Acad. Publ., 2010. Paperback. Book Condition: New. Language: English . Brand New Book. The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of ?-Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented. Bookseller Inventory # KNV9783838326511

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