Response Time of Charge Carriers in Semiconductors: :Chromium Doped Photorefractive Bismuth Sillenite Crystals

 
9783843389570: Response Time of Charge Carriers in Semiconductors: :Chromium Doped Photorefractive Bismuth Sillenite Crystals
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As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd:YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges.

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Getasew Admasu Wubetu Bahir Dar University, College of Science Physics Department, P.O.Box: 79, Bahir Dar Ethiopia Advanced Masters in Nanophysics from Antwerp University on September 8,2009 - M.Sc in Nanomaterials from University of Ulm, Germany on November 26, 2004 - B.Ed in Physics from Alemaya University Ethiopia: July 8, 2000

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Book Description LAP Lambert Acad. Publ. Jan 2011, 2011. Taschenbuch. Condition: Neu. Neuware - As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd:YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges. 68 pp. Englisch. Seller Inventory # 9783843389570

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Book Description LAP Lambert Acad. Publ. Jan 2011, 2011. Taschenbuch. Condition: Neu. Neuware - As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd:YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges. 68 pp. Englisch. Seller Inventory # 9783843389570

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Book Description LAP Lambert Academic Publishing, Germany, 2011. Paperback. Condition: New. Language: English. Brand new Book. As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd: YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges. Seller Inventory # KNV9783843389570

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Book Description LAP Lambert Acad. Publ. Jan 2011, 2011. Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Neuware - As the summary, carrier relaxation dynamics in non-doped BSO and Cr doped BSO is studied using the PIA change by nanosecond pulse excitation using a frequency doubled Nd:YAG laser. The time-resolved PIA decay in non-doped BSO relaxes in a few hundred milli second whereas for the Cr doped BSO, this happens in time of the order of hundred seconds. The Cr defects in BSO increase the density of the shallow and deep trap levels that increase relatively the life time of the charge carriers compared to non-doped BSO. The microoptical mechanism for the PIA decay is related to the carrier tunneling between localized state of each Cr ions than carrier trapping. From the optical absorption spectra measurements, the Cr doped BSO has shifted the intrinsic edge to the longer wavelength and gave rise to new absorption bands in the visible and NIR ranges. 68 pp. Englisch. Seller Inventory # 9783843389570

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