GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers: Through Monte Carlo Particle-Based Device Simulations

 
9783847325673: GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers: Through Monte Carlo Particle-Based Device Simulations

This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.

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About the Author:

Diego Guerra received the Ph.D. degree in Electrical Engineering from Arizona State University, Tempe, in 2011. His research interests include the modeling and the small-signal/large-signal characterization of GaN HEMTs for millimeter-wave power amplifiers (he is author and co-author of 15 publications) and InP HEMTsfor terahertz electronics.

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Book Description LAP Lambert Academic Publishing, Germany, 2012. Paperback. Book Condition: New. Aufl.. 221 x 155 mm. Language: English . Brand New Book ***** Print on Demand *****.This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers. Bookseller Inventory # AAV9783847325673

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Book Description LAP Lambert Academic Publishing. Paperback. Book Condition: New. Paperback. 224 pages. Dimensions: 8.7in. x 6.1in. x 0.6in.This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Paperback. Bookseller Inventory # 9783847325673

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