Nanoscale Transistors: Device Physics, Modeling and Simulation

 
9788181288554: Nanoscale Transistors: Device Physics, Modeling and Simulation

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Lundstrom, Mark
Published by New Age International, New Delhi (2008)
ISBN 10: 8181288556 ISBN 13: 9788181288554
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Book Description New Age International, New Delhi, 2008. Hardcover. Book Condition: New. First. 226pp. Bookseller Inventory # 257610

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Jing Guo,Mark Lundstrom
Published by New Age International (P) Limited (2008)
ISBN 10: 8181288556 ISBN 13: 9788181288554
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Book Description New Age International (P) Limited, 2008. Hardcover. Book Condition: New. First edition. Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapter 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. Printed Pages: 226. Bookseller Inventory # 24686

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3.

Jing Guo,Mark Lundstrom
Published by New Age International (P) Limited (2008)
ISBN 10: 8181288556 ISBN 13: 9788181288554
New Hardcover First Edition Quantity Available: > 20
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A - Z Books
(New Delhi, DELHI, India)
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Book Description New Age International (P) Limited, 2008. Hardcover. Book Condition: New. First edition. Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapter 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. Printed Pages: 226. Bookseller Inventory # 24686

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