Since scaling of C.M.O.S. is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk C.M.O.S. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate C.M.O.S. Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate C.M.O.S. technologies.
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