Epitaxial Growth of Nitrides on Germanium

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9789054874850: Epitaxial Growth of Nitrides on Germanium
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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates—and solid phase epitaxy of germanium on silicon substrates—this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.

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About the Author:

Ruben Lieten has a PhD in applied science and centers his research on epitaxial growth and characterization of III-Nitrides, Ge3N4, and germanium. In 2008 he joined the Interuniversity Microelectronics Centre in Belgium to continue research on epitaxial growth by molecular beam epitaxy.

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Lieten, Ruben Remco
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Book Description VUB University Press, Belgium, 2010. Paperback. Condition: New. Language: English . Brand New Book. A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements. Seller Inventory # AAN9789054874850

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Book Description VUB University Press, Belgium, 2010. Paperback. Condition: New. Language: English . Brand New Book. A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements. Seller Inventory # AAN9789054874850

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Book Description VUB University Press, Belgium, 2010. Paperback. Condition: New. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements. Seller Inventory # BTE9789054874850

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