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Delta-doping of Semiconductors

Cambridge University Press

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ISBN 10: 0521482887 / ISBN 13: 9780521482882
Published by Cambridge University Press, 1996
Used Condition: Good Hardcover
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Bibliographic Details

Title: Delta-doping of Semiconductors

Publisher: Cambridge University Press

Publication Date: 1996

Binding: Hardcover

Book Condition: Good

About this title

Synopsis:

Doping profiles are a key element in the development of modern semiconductor technology. This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter sets out the basic theoretical and experimental concepts involved, the authors discuss the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth. They then present the techniques for characterizing doping distributions, followed by several chapters on the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering.

Book Description:

This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. After an introductory chapter setting out the basic concepts involved, fabrication techniques are discussed. in detail. The methods of characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices.

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