MOS (Metal Oxide Semiconductor) Physics and Technology

E. H. Nicollian

Published by Wiley-Interscience, 2002
ISBN 10: 047143079X / ISBN 13: 9780471430797
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Synopsis: Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

From the Back Cover: The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.

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Title: MOS (Metal Oxide Semiconductor) Physics and ...
Publisher: Wiley-Interscience
Publication Date: 2002
Binding: Paperback
Book Condition: Used: Good

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Book Description John Wiley Sons Inc, United States, 2002. Paperback. Book Condition: New. Reprint. Language: English . Brand New Book. Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. Bookseller Inventory # AAH9780471430797

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Book Description John Wiley Sons Inc, United States, 2002. Paperback. Book Condition: New. Reprint. Language: English . Brand New Book. Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. Bookseller Inventory # AAH9780471430797

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