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Modeling and Simulation of Negative Bias Temperature Instability

Dr. Robert Entner

ISBN 10: 3836459973 / ISBN 13: 9783836459976
Published by VDM Verlag
New Condition: New Soft cover
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144 pages. Dimensions: 9.4in. x 6.7in. x 0.3in.Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Bookseller Inventory # 9783836459976

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Bibliographic Details

Title: Modeling and Simulation of Negative Bias ...

Publisher: VDM Verlag

Binding: Paperback

Book Condition:New

Book Type: Paperback

About this title

Synopsis:

Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation.

About the Author:

Dipl.-Ing. Dr.techn.: Electrical Engineering and PhD studies at the Vienna University of Technology. IC design engineer at NXP Semiconductors in Gratkorn, Austria.

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