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Roberts, S. G. (Et Al editors)

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ISBN 10: 0854980601 / ISBN 13: 9780854980604
Published by Institute of Physics, Bristol And New York, 1989
Used Condition: As New Hardcover
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Institute of Physics Conference Series number 104. All aspects covered: "from fundamental structural, electronic, optical and mechanical properties to their effects on devices. " ; 8vo; 470 pages. Bookseller Inventory # 15142

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Bibliographic Details


Publisher: Institute of Physics, Bristol And New York

Publication Date: 1989

Binding: Hardcover

Book Condition:As New

Dust Jacket Condition: Fine dust

About this title


The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

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