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Spin manipulation using semimagnetic heterostructures

Taras Slobodskyy

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ISBN 10: 3836453800 / ISBN 13: 9783836453806
Published by VDM Verlag Dr. Mueller e.K.
New Condition: New Soft cover
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116 pages. Dimensions: 9.6in. x 6.7in. x 0.2in.In pursuit of a novel generation of devices, exploration of spin properties of the particles is needed. Spintronics is a modern field in physics which exploits spin properties to be used in addition to the charge degree of freedom. Since the conductivity mismatch problem presents a fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, other means for injecting spin-polarized carriers must be used. With a tunnel contact, it is possible to achieve a highly spin-polarized room-temperature tunnel injection. Here we describe a novel approach of applying magnetic resonant tunneling diodes for spin manipulation. In this work, growth and properties of all-II-VI magnetic resonant tunneling diodes, as applied to spintronics, are reported. This item ships from multiple locations. Your book may arrive from Roseburg,OR, La Vergne,TN. Bookseller Inventory # 9783836453806

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Bibliographic Details

Title: Spin manipulation using semimagnetic ...

Publisher: VDM Verlag Dr. Mueller e.K.

Binding: Paperback

Book Condition:New

Book Type: Paperback

About this title

Synopsis:

In pursuit of a novel generation of devices, exploration of spin properties of the particles is needed. Spintronics is a modern field in physics which exploits spin properties to be used in addition to the charge degree of freedom. Since the conductivity mismatch problem presents a fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor, other means for injecting spin-polarized carriers must be used. With a tunnel contact, it is possible to achieve a highly spin-polarized room-temperature tunnel injection. Here we describe a novel approach of applying magnetic resonant tunneling diodes for spin manipulation. In this work, growth and properties of all-II-VI magnetic resonant tunneling diodes, as applied to spintronics, are reported.

About the Author:

Is working in the field of semiconductor technology over 10 years. Multiple high profile publications in per review journals reflect both the level and quality of scientific research conducted by the author.

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