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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge, Cambridge, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
First Edition
Hardcover. Condition: Very Fine. First Edition. No markings.
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Modeling and Characterization of Rf and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Condition: New.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Condition: New.
-
Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Condition: New.
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Modeling and Characterization of Rf and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Condition: As New. Unread book in perfect condition.
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Paperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
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Modeling and Characterization of Rf and Microwave Power Fets (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
US$ 119.09
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Modeling and Characterization of Rf and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 120.15
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Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Condition: New.
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Modeling and Characterization of Rf and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 131.63
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
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Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Condition: As New. Unread book in perfect condition.
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Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Condition: New.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Seller rating 5 out of 5 stars
US$ 167.93
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Add to basketPaperback. Condition: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
-
Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 157.44
US$ 20.52 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: As New. Unread book in perfect condition.
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 176.53
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Add to basketCondition: New. In.
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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Hardcover. Condition: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
-
Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
US$ 200.88
US$ 17.10 shipping
Ships from United Kingdom to U.S.A.Quantity: 2 available
Add to basketHardcover. Condition: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
US$ 162.42
US$ 88.90 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketPaperback. Condition: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
-
Modeling and Characterization of RF and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringUS$ 243.07
US$ 17.10 shipping
Ships from United Kingdom to U.S.A.Quantity: 2 available
Add to basketHardcover. Condition: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
US$ 114.70
US$ 17.10 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.
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Modeling and Characterization of RF and Microwave Power FETs
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
US$ 121.30
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Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketPaperback / softback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
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Electromagnetic Band Gap Structures in Antenna Engineering
Book 3 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
US$ 152.14
US$ 17.10 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketHardcover. Condition: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock. This item is printed on demand.
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
US$ 131.70
US$ 50.61 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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Modeling and Characterization of RF and Microwave Power Fets
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
US$ 134.95
US$ 58.04 shipping
Ships from Germany to U.S.A.Quantity: Over 20 available
Add to basketKartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.Inhaltsver.
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Modeling and Characterization of RF and Microwave Power FETs (Paperback)
Book 1 of 20: Cambridge RF and Microwave EngineeringLanguage: English
Published by Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Paperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
