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hardcover. Condition: As New. Ships Out Tomorrow!
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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies: Process-Aware SRAM Design and Test (Frontiers in Electronic Testing, 40)
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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies : Process-Aware SRAM Design and Test
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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies : Process-Aware SRAM Design and Test
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Condition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
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Condition: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
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Hardcover. Condition: Like New. Like New. book.
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Condition: As New. Unread book in perfect condition.
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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies
Published by Springer Netherlands, 2010
ISBN 10: 904817855X ISBN 13: 9789048178551
Language: English
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Gives a process-aware perspective on SRAM circuit design and testProvides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise MarginIntroduces the concept of stability fault modelling.
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CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies
Published by Springer Netherlands, 2008
ISBN 10: 1402083629 ISBN 13: 9781402083624
Language: English
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Gives a process-aware perspective on SRAM circuit design and testProvides detailed coverage of SRAM cell stability, stability sensitivity and analytical evaluation of Static Noise MarginIntroduces the concept of stability fault modelling.
