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Fayçal DJEFFAL; Nacereddine LAKHDAR

Published by Univ Européenne (2010)

ISBN 10: 6131551391 ISBN 13: 9786131551390

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From: Gallix (Gif sur Yvette, France)

Bookseller Rating: 4-star rating

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Item Description: Univ Européenne, 2010. Book Condition: Neuf. Bookseller Inventory # 9786131551390

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Lakhdar Nacereddine, Djeffal Faycal

Published by LAP Lambert Academic Publishing 2013-01-29 (2013)

ISBN 10: 3659333336 ISBN 13: 9783659333330

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From: Blackwell's (Oxford, OX, United Kingdom)

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Item Description: LAP Lambert Academic Publishing 2013-01-29, 2013. paperback. Book Condition: New. Bookseller Inventory # 9783659333330

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Lakhdar, Nacereddine / Djeffal, Fayçal

ISBN 10: 3659333336 ISBN 13: 9783659333330

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Item Description: Book Condition: New. Publisher/Verlag: LAP Lambert Academic Publishing | For High Performance Applications | III-V materials can play a major role along with Si in future logic and analog submicron devices. In this book, new approaches and designs of GaN-MESFET called multigate GaN-MESFETs and their 2-D analytical and numerical analysis have been proposed and investigated in order to improve the SCEs for future power switching and digital gate devices. It has been analyzed that the Dual Material design offers superior characteristics as compared to single material gate devices. In addition, MOGAs- based approaches are proposed to optimize the different designs in term of subthreshold and analog performances for high speed submicron digital applications and to search for optimal electrical and dimensional parameters to obtain better electrical performance of the device for analog and digital circuit applications | Format: Paperback | Language/Sprache: english | 140 pp. Bookseller Inventory # K9783659333330

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Lakhdar Nacereddine; Djeffal Faycal

Published by LAP Lambert Academic Publishing (2013)

ISBN 10: 3659333336 ISBN 13: 9783659333330

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Price: US$ 71.78
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Item Description: LAP Lambert Academic Publishing, 2013. Book Condition: New. This item is printed on demand for shipment within 3 working days. Bookseller Inventory # LP9783659333330

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LAKHDAR Nacereddine, Djeffal Fayçal

Published by LAP Lambert Academic Publishing, United States (2013)

ISBN 10: 3659333336 ISBN 13: 9783659333330

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Quantity Available: 1

From: The Book Depository EURO (London, United Kingdom)

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Item Description: LAP Lambert Academic Publishing, United States, 2013. Paperback. Book Condition: New. Language: English . Brand New Book. III-V materials can play a major role along with Si in future logic and analog submicron devices. In this book, new approaches and designs of GaN-MESFET called multigate GaN-MESFETs and their 2-D analytical and numerical analysis have been proposed and investigated in order to improve the SCEs for future power switching and digital gate devices. It has been analyzed that the Dual Material design offers superior characteristics as compared to single material gate devices. In addition, MOGAs- based approaches are proposed to optimize the different designs in term of subthreshold and analog performances for high speed submicron digital applications and to search for optimal electrical and dimensional parameters to obtain better electrical performance of the device for analog and digital circuit applications. Bookseller Inventory # KNV9783659333330

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Results (1 - 5) of 5