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Hardcover. Condition: Very Good. No Jacket. Former library book; May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less 0.88.
Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
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Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
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Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Seller: Books Puddle, New York, NY, U.S.A.
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Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Seller: Revaluation Books, Exeter, United Kingdom
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Add to basketHardcover. Condition: Brand New. 146 pages. 9.25x6.25x0.50 inches. In Stock.
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Condition: New. pp. 146.
Seller: Revaluation Books, Exeter, United Kingdom
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Add to basketPaperback. Condition: Brand New. reprint edition. 146 pages. 9.25x6.10x0.36 inches. In Stock.
Seller: Majestic Books, Hounslow, United Kingdom
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Published by Springer International Publishing, 2017
ISBN 10: 3319604015 ISBN 13: 9783319604015
Language: English
Seller: moluna, Greven, Germany
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Add to basketGebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applicationsModels the statistical retention time distribution of GC-eDRAM and validates the model by silicon measurementsDescribes various memory op.
Seller: Biblios, Frankfurt am main, HESSE, Germany
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Published by Springer International Publishing, 2018
ISBN 10: 3319868551 ISBN 13: 9783319868554
Language: English
Seller: moluna, Greven, Germany
US$ 118.82
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides novel gain-cell embedded DRAM (GC-eDRAM) designs for various low-power VLSI SoC applicationsModels the statistical retention time distribution of GC-eDRAM and validates the model by silicon measurementsDescribes various memory op.
Seller: Majestic Books, Hounslow, United Kingdom
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Seller: Biblios, Frankfurt am main, HESSE, Germany
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