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Condition: New.
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120 Best Poems Volume 10
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 12.95
US$ 16.38 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Short Channel MOSFETs: A modeling approach
Language: English
Published by LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659891029 ISBN 13: 9783659891021
Condition: New.
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Remedies of Short Channel Effects in Conventional Mosfet
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2014
ISBN 10: 3659566268 ISBN 13: 9783659566264
Condition: New. pp. 76.
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Surface Potential of Dual Material Gate Mosfet with High-K Dielectrics
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2013
ISBN 10: 3659421227 ISBN 13: 9783659421228
Condition: New. pp. 64.
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Modelling of basic parameters for non-conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206739813 ISBN 13: 9786206739814
Condition: New.
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Surface Potential of Dual Material Gate Mosfet with High-K Dielectrics
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2013
ISBN 10: 3659421227 ISBN 13: 9783659421228
Condition: New.
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Parameter modeling of submicron mosfet
Language: English
Published by Editorial Academica Espanola, 2011
ISBN 10: 3846522007 ISBN 13: 9783846522004
Condition: New. pp. 64.
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Short Channel MOSFETs: A modeling approach
Language: English
Published by LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659891029 ISBN 13: 9783659891021
US$ 75.51
US$ 13.67 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Brand New. 80 pages. 8.66x5.91x0.19 inches. In Stock.
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Review of non conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206160416 ISBN 13: 9786206160410
Condition: New.
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Surface potential of Dual Material Gate MOSFET with high-k dielectrics
Language: English
Published by LAP LAMBERT Academic Publishing Jun 2013, 2013
ISBN 10: 3659421227 ISBN 13: 9783659421228
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing silicon oxide. These high-k dielectrics exhibit a trend of decreasing barrier height with increasing dielectric constant.The high-k materials with far higher permittivity create same gate capacitance for thicker dielectric. In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub threshold surface potential of a short-channel DMG MOS transistor with a uniformly-doped channel.Books on Demand GmbH, Überseering 33, 22297 Hamburg 64 pp. Englisch.
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Study of subthreshold surface potential of MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing Jul 2023, 2023
ISBN 10: 6206753735 ISBN 13: 9786206753735
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub-threshold characteristics of a short channel MOS transistor with uniformly-doped channel. An analytical model for sub-threshold surface potential in a short channel MOS transistor has been developed by solving the pseduo-2D Poisson¿s equation, formulated by applying Gauss¿s law to a rectangular box in the channel covering the entire depletion layer depth. The model has been able to predict an increased influence of the junction depletion regions for smaller channel length and/or higher drain/source bias voltages due to increased charge sharing. The same model is applied to find the sub threshold surface potential for Double Halo MOSFETs. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k material are used instead of silicon dioxide as the insulating material underneath the gate. These modeling will prove to be beneficial and help in further research work in the future.Books on Demand GmbH, Überseering 33, 22297 Hamburg 64 pp. Englisch.
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Modelling of basic parameters for non-conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing Jul 2023, 2023
ISBN 10: 6206739813 ISBN 13: 9786206739814
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.Books on Demand GmbH, Überseering 33, 22297 Hamburg 64 pp. Englisch.
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Surface potential of Dual Material Gate MOSFET with high-k dielectrics | Short Channel Effects in MOSFET
Language: English
Published by LAP LAMBERT Academic Publishing, 2013
ISBN 10: 3659421227 ISBN 13: 9783659421228
Taschenbuch. Condition: Neu. Surface potential of Dual Material Gate MOSFET with high-k dielectrics | Short Channel Effects in MOSFET | Swapnadip De | Taschenbuch | 64 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659421228 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
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Conceptos básicos de medios visuales
Language: Spanish
Published by Ediciones Nuestro Conocimiento, 2023
ISBN 10: 6206462528 ISBN 13: 9786206462521
Condition: New.
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Modelización de los parámetros básicos de los MOSFET no convencionales
Language: Spanish
Published by Ediciones Nuestro Conocimiento, 2023
ISBN 10: 6206331180 ISBN 13: 9786206331186
Condition: New.
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Study of subthreshold surface potential of MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206753735 ISBN 13: 9786206753735
Taschenbuch. Condition: Neu. Study of subthreshold surface potential of MOSFETs | Swapnadip De (u. a.) | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206753735 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
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Modelling of basic parameters for non-conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206739813 ISBN 13: 9786206739814
Taschenbuch. Condition: Neu. Modelling of basic parameters for non-conventional MOSFETs | Swapnadip De | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206739814 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
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Spread Spectrum System | Direct Sequence SSS
Language: English
Published by LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3846597465 ISBN 13: 9783846597460
Taschenbuch. Condition: Neu. Spread Spectrum System | Direct Sequence SSS | Swapnadip De | Taschenbuch | 56 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783846597460 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
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Review of non conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing Mai 2023, 2023
ISBN 10: 6206160416 ISBN 13: 9786206160410
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -The book gives an insight into scaling and short channel effects in MOSFETs. Also the brief idea of non conventional MOSFET structures can be obtained from the text. Beginners can go through the book to acquire knowledge on the device physics behind short channel MOSFETs.The researchers can go through the book to obtain in depth idea on developing models of novel device structures which can suppress short channel effects more effectively.Books on Demand GmbH, Überseering 33, 22297 Hamburg 108 pp. Englisch.
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Review of non conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206160416 ISBN 13: 9786206160410
Taschenbuch. Condition: Neu. Review of non conventional MOSFETs | Swapnadip De | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206160410 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
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Revisión de los MOSFET no convencionales
Language: Spanish
Published by Ediciones Nuestro Conocimiento, 2023
ISBN 10: 6206030385 ISBN 13: 9786206030386
Condition: New.
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Spread Spectrum System: Direct Sequence SSS
Language: English
Published by LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3846597465 ISBN 13: 9783846597460
US$ 135.20
US$ 34.18 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Parameter modeling of submicron mosfet: Inner fringing field effect
Language: English
Published by LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3846522007 ISBN 13: 9783846522004
US$ 135.20
US$ 34.18 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Low Power Vlsi Design : Fundamentals
Language: English
Published by De Gruyter Oldenbourg, 2016
ISBN 10: 3110455269 ISBN 13: 9783110455267
Condition: New.
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Review of non conventional MOSFETs
Language: English
Published by LAP LAMBERT Academic Publishing, 2023
ISBN 10: 6206160416 ISBN 13: 9786206160410
US$ 140.83
US$ 34.18 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketpaperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Low Power VLSI Design: Fundamentals
Language: English
Published by de Gruyter Oldenbourg 2016-08-08, 2016
ISBN 10: 3110455269 ISBN 13: 9783110455267
US$ 180.86
US$ 21.18 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketHardcover. Condition: New.
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Low Power Vlsi Design : Fundamentals
Language: English
Published by De Gruyter Oldenbourg, 2016
ISBN 10: 3110455269 ISBN 13: 9783110455267
Condition: As New. Unread book in perfect condition.
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Low Power Vlsi Design : Fundamentals
Language: English
Published by De Gruyter Oldenbourg, 2016
ISBN 10: 3110455269 ISBN 13: 9783110455267
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 184.36
US$ 20.51 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketCondition: New.
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Remedies of Short Channel Effects in Conventional MOSFET: A parameter modeling study
Language: English
Published by LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659566268 ISBN 13: 9783659566264
US$ 171.81
US$ 34.18 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketpaperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
