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Defects Properties Semiconductors Defect (13 results)
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DEFECTS AND PROPERTIES OF SEMICONDUCTORS: Defect Engineering
Language: English
Published by KTK Scientific Publishers, Tokyo, 1987
ISBN 10: 9027723524 ISBN 13: 9789027723529
Seller: Amnesty Bookshop, Malvern, Great Malvern, United Kingdom
Seller rating 5 out of 5 stars
First Edition
US$ 62.04
US$ 10.27 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketHb without Dj. Condition: Fine. First Edition. Contains nearly all the papers presented at the Symposium on "Defects and Qualities of Semiconductors" held in Tokyo in May 1984. In immaculate condition throughout. All profits to Amnesty International. Size: 15.5cm - 23.3cm with 261pp.
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Condition: New.
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Condition: New. pp. 300.
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Condition: New. pp. 300 Illus.
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Condition: As New. Unread book in perfect condition.
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Defects and Properties of Semiconductors: Defect Engineering (Advances in Solid State Technology)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 90.66
US$ 16.40 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Condition: New. pp. 300.
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US$ 89.47
US$ 21.20 shipping
Ships from United Kingdom to U.S.A.Quantity: 10 available
Add to basketPF. Condition: New.
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Defects and Properties of Semiconductors: Defect Engineering
Language: English
Published by D. Reidel Publishing Company, 2013
ISBN 10: 9401086168 ISBN 13: 9789401086165
US$ 128.84
US$ 13.69 shipping
Ships from United Kingdom to U.S.A.Quantity: 2 available
Add to basketPaperback. Condition: Brand New. 272 pages. 9.02x5.99x0.62 inches. In Stock.
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Defects and Properties of Semiconductors : Defect Engineering
Language: English
Published by Springer Netherlands, Springer Netherlands, 2011
ISBN 10: 9401086168 ISBN 13: 9789401086165
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This volume contains nearly all of the papers presented at the Symposium on 'Defects and Qualities of Semiconductors' which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project 'Quality Developement of Semiconductors by Utilization of Crystal Defects' sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term 'DEFECT ENGINEERING' was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
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US$ 382.10
US$ 34.22 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketHardcover. Condition: Very Good. Dust Jacket may NOT BE INCLUDED.CDs may be missing. SHIPS FROM MULTIPLE LOCATIONS. book.
