Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device Applications provides an introduction to the basic principles of the LPE technique as applied to the technologically important III-V materials. A balanced assessment of the strengths and weaknesses of this technique against other commonly used methods such as MBE and MOVPE is given, along with a detailed discussion of the practical and economic considerations involved in setting up and running an LPE growth system. The book also presents the theoretical basis of the LPE growth process, including phase-diagram calculations, diffusion-limited growth models and impurity-incorporation mechanisms. For the device physicist, there is a thorough treatment of the electrical, optical and structural properties of LPE-grown III-V materials and the application of these materials to a variety of electronic devices such as lasers, LEDs, microwave devices and quantum well structures. This book is a comprehensive treatment of thin film growth by LPE as applied to III-V materials. As such it will appeal to newcomers to this field at both undergraduate and research levels, and in particular to those with an interest in device applications.
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