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Nanometer-Scale Resistivity of Copper Films and Interconnects: Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications - Softcover
A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean free path of electrons in metals such as copper (size effect). The simulation program: 1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs¿ theory, 2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, 3) includes the effects of surface and grain-boundary scattering either separately or together, and 4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program.
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About the Author:
Arif Emre Yar¿mb¿y¿k holds a B.S. degree in physics from Istanbul Technical University and a D.Sc. degree in computer engineering from the George Washington University. During his doctoral study, he was a guest researcher at NIST, Gaithersburg, MD. Since 2007, he has been working as a software engineer in OpenBand of Virginia, LLC.
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- PublisherVDM Verlag
- Publication date2009
- ISBN 10 3639167708
- ISBN 13 9783639167702
- BindingPaperback
- Number of pages100
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Nanometer-Scale Resistivity of Copper Films and Interconnects
Published by
VDM Verlag Dr. Müller
(2009)
ISBN 10: 3639167708
ISBN 13: 9783639167702
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Book Description Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A highly versatile simulation program is developedand used to examine how the resistivity of thin metal films andlines increases as their dimensions approach and become smaller than themean free path of electrons in metals such as copper (sizeeffect). The simulation program: 1) provides a more accuratecalculation of surface scattering effects than that obtained fromthe usual formulation of Fuchs theory, 2) calculatesgrain-boundary effects that are consistent with the theory of Mayadas andShatzkes, 3) includes the effects of surface and grain-boundaryscattering either separately or together, and 4) simulates the effecton resistivity if a surface of a film or line has a different value forthe scattering parameter. The increase in resistivity withdecreasing thickness of thin, evaporated copper films (approximately 10 nm to150 nm thick) was determined from sheet resistance and filmthickness measurements. Good agreement between the experimentalresults with those of the simulation program was obtainedwhen the measured mean grain sizes were used by the simulationprogram. 100 pp. Englisch. Seller Inventory # 9783639167702
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Nanometer-Scale Resistivity of Copper Films and Interconnects : Simulation and Measurement of Nanometer-Scale Resistivity of Copper Films for Interconnect Applications
Published by
VDM Verlag Dr. Müller
(2009)
ISBN 10: 3639167708
ISBN 13: 9783639167702
New
Taschenbuch
Quantity: 2
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Book Description Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A highly versatile simulation program is developedand used to examine how the resistivity of thin metal films andlines increases as their dimensions approach and become smaller than themean free path of electrons in metals such as copper (sizeeffect). The simulation program: 1) provides a more accuratecalculation of surface scattering effects than that obtained fromthe usual formulation of Fuchs theory, 2) calculatesgrain-boundary effects that are consistent with the theory of Mayadas andShatzkes, 3) includes the effects of surface and grain-boundaryscattering either separately or together, and 4) simulates the effecton resistivity if a surface of a film or line has a different value forthe scattering parameter. The increase in resistivity withdecreasing thickness of thin, evaporated copper films (approximately 10 nm to150 nm thick) was determined from sheet resistance and filmthickness measurements. Good agreement between the experimentalresults with those of the simulation program was obtainedwhen the measured mean grain sizes were used by the simulationprogram. Seller Inventory # 9783639167702
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Nanometer-Scale Resistivity of Copper Films andInterconnects
Published by
VDM Verlag Dr. Müller
(2009)
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ISBN 13: 9783639167702
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Book Description Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Yarimbiyik Arif EmreArif Emre Yarimbiyik holds a B.S. degree in physics from IstanbulnTechnical University nand a D.Sc. degree in computer engineering from the GeorgenWashington University. nDuring his doctoral study, he was a guest . Seller Inventory # 4963539
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Nanometer-Scale Resistivity Of Copper Films And Interconnects: Simulation And Measurement Of Nanometer-Scale Resistivity Of Copper Films For Interconnect Applications
Published by
Vdm Verlag Dr. Müller
(2009)
ISBN 10: 3639167708
ISBN 13: 9783639167702
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Book Description Paperback. Condition: Brand New. In Stock. Seller Inventory # zk3639167708
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