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The Blue Light-Emitting Diodes: Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures - Softcover
In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.
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I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
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- PublisherVDM Verlag Dr. Müller
- Publication date2010
- ISBN 10 3639268199
- ISBN 13 9783639268195
- BindingPaperback
- Number of pages156
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The Blue Light-Emitting Diodes: Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures
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The Blue Light-Emitting Diodes
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The Blue LightEmitting Diodes Fabrication and Characterization of LightEmitting Diodes with Varying InGaNGaN Multiple QuantumWell Structures
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The Blue Light-Emitting Diodes
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Book Description Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters. 156 pp. Englisch. Seller Inventory # 9783639268195
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The Blue Light-Emitting Diodes : Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures
Published by
VDM Verlag Dr. Müller E.K.
(2010)
ISBN 10: 3639268199
ISBN 13: 9783639268195
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Book Description Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters. Seller Inventory # 9783639268195
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The Blue LightEmitting Diodes Fabrication and Characterization of LightEmitting Diodes with Varying InGaNGaN Multiple QuantumWell Structures
Published by
VDM Verlag Dr. Müller
(2010)
ISBN 10: 3639268199
ISBN 13: 9783639268195
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Book Description PAP. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Seller Inventory # L0-9783639268195
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Book Description Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Choi Rak-JunI got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushim. Seller Inventory # 4972521
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