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Published by Springer, 2022
ISBN 10: 9811661227ISBN 13: 9789811661228
Seller: booksXpress, Bayonne, NJ, U.S.A.
Book
Soft Cover. Condition: new.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Books Puddle, New York, NY, U.S.A.
Book
Condition: Used. pp. 286.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Majestic Books, Hounslow, United Kingdom
Book
Condition: Used. pp. 286.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Fair. Acceptable/Fair condition. Book is worn, but the pages are complete, and the text is legible. Has wear to binding and pages, may be ex-library.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Books Unplugged, Amherst, NY, U.S.A.
Book
Condition: Fair. Buy with confidence! Book is in acceptable condition with wear to the pages, binding, and some marks within.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Good. Book is in Used-Good condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain limited notes and highlighting.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Fine. Book is in Used-LikeNew condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Good. Book is in Used-Good condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain limited notes and highlighting.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Very Good. Book is in Used-VeryGood condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain very limited notes and highlighting.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Fine. Book is in Used-LikeNew condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: Very Good. Book is in Used-VeryGood condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear and contain very limited notes and highlighting.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Books Unplugged, Amherst, NY, U.S.A.
Book
Condition: New. Buy with confidence! Book is in new, never-used condition.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Very Good. Very Good condition. Shows only minor signs of wear, and very minimal markings inside (if any).
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Fine. Like New condition. Great condition, but not exactly fully crisp. The book may have been opened and read, but there are no defects to the book, jacket or pages.
Published by Springer, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: New. New! This book is in the same immaculate condition as when it was published.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Very Good. Very Good condition. Shows only minor signs of wear, and very minimal markings inside (if any).
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Books Unplugged, Amherst, NY, U.S.A.
Book
Condition: Fair. Buy with confidence! Book is in acceptable condition with wear to the pages, binding, and some marks within.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: Fine. Like New condition. Great condition, but not exactly fully crisp. The book may have been opened and read, but there are no defects to the book, jacket or pages.
Published by Springer India, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Buchpark, Trebbin, Germany
Book
Condition: Sehr gut. 1st ed. 2015. Gepflegter, sauberer Zustand. Außen: Buchschnitt verkürzt. 25686754/12.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: GF Books, Inc., Hawthorne, CA, U.S.A.
Book
Condition: New. Book is in NEW condition.
Published by Springer, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: Book Deals, Tucson, AZ, U.S.A.
Book
Condition: New. New! This book is in the same immaculate condition as when it was published.
Published by Springer India Aug 2015, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike. 288 pp. Englisch.
Published by Springer India Okt 2016, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike. 288 pp. Englisch.
Published by Springer India, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: moluna, Greven, Germany
Book Print on Demand
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive resource covering characterization methods, modeling techniques and gate insulator process dependence of BTIAccurately establishes the physical mechanism of BTI, accurate modeling of measured degradation for wide variety o.
Published by Springer India, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive resource covering characterization methods, modeling techniques and gate insulator process dependence of BTIAccurately establishes the physical mechanism of BTI, accurate modeling of measured degradation for wide variety o.
Published by Springer India, 2015
ISBN 10: 8132225074ISBN 13: 9788132225072
Seller: AHA-BUCH GmbH, Einbeck, Germany
Book
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Published by Springer India, 2016
ISBN 10: 8132234243ISBN 13: 9788132234241
Seller: AHA-BUCH GmbH, Einbeck, Germany
Book
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Published by Springer Nature Singapore Nov 2021, 2021
ISBN 10: 9811661197ISBN 13: 9789811661198
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed. 336 pp. Englisch.
Published by Springer Nature Singapore Nov 2022, 2022
ISBN 10: 9811661227ISBN 13: 9789811661228
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Book Print on Demand
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and ACstress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed. 336 pp. Englisch.
Published by Springer Nature Singapore, 2022
ISBN 10: 9811661227ISBN 13: 9789811661228
Seller: moluna, Greven, Germany
Book Print on Demand
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Covers characterization methods, modelling techniques, and impact of device architectures and processesEstablishes accurate modelling of measured degradation for wide variety of MOSFET architecturesHelps in determination of degradation at e.