3d Integration of Resistive Switching Memory

Luo, Qing (EDT)

ISBN 10: 1032489502 / ISBN 13: 9781032489506

Published by CRC Press, 2024

About this Item

Seller Inventory # 48822228-n

Bibliographic Details

• Title: 3d Integration of Resistive Switching Memory
• Publisher: CRC Press
• Publication Date: 2024
• Language: English
• ISBN 10: 1032489502
• ISBN 13: 9781032489506
• Binding: Soft cover
• Condition: New

About this title

Synopsis

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications.

Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts:

1: Associative Problems in Crossbar array and 3D architectures;
2: Selector Devices and Self-Selective Cells;
3: Integration of 3D RRAM;
4: Reliability Issues in 3D RRAM;
5: Applications of 3D RRAM beyond Storage.

The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

About the Author

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.