Items related to Internal Photoemission Spectroscopy: Fundamentals and...
The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well.
Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication.
- First complete model description of the internal photoemission phenomena
- Overview of the most reliable energy barrier determination procedures and trap characterization methods
- Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
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From the Back Cover:
Photoemission of charge carriers from one solid into another (the internal photoemission, IPE) represents the counterpart of the well-known photoemission into vacuum (the external photoemission) which constitute a base for wide spectrum of surface spectroscopy techniques. In a similar spirit, IPE represents a powerful tool of electron state spectroscopy at interfaces and in heterostructures combining the interface sensitivity typical of the conventional photoelectron spectroscopy and sufficient depth and the non-destructive character of analysis characteristic to the optical spectroscopy. The book provides a reader with the first elaborate description of fundamental and technical aspects of the IPE spectroscopy as well as with overview of recent achievements in the field of novel material systems for electronic application in micro- and nano-devices.
Following an introduction indicating the need for interface electron spectroscopy, the physical grounds of IPE are discussed. In addition, the practical features in realization of IPE measurements are presented. Next, the approaches to characterization of electron states at interfaces are presented and illustrated by original experimental results (Chapters III and IV). This part is complemented by the analysis of (photo) injection methods aimed at characterization of localized states in thin layers of solids and at their interfaces (Chapters V-VIII). The band alignments at semiconductor (Chapter IX) and metal interfaces (Chapter X) are surveyed as well as behaviour of electrically active defects in thin dielectric films (Chapter XI) in relationship to development of high-permittivity insulator technology for the advanced electronic devices.
The Internal Photoemission Spectroscopy will serve as a practical guide for the researches in the field and also provide them with most up-to-date reference material concerning fundamental electronic properties of interfaces and thin sold films. It may also be used as introductory book for graduate students working on different aspects of spectroscopic characterization of interfaces or taking advanced courses on semiconductor physics and materials characterization.
About the Author:
Following an introduction indicating the need for interface electron spectroscopy, the physical grounds of IPE are discussed. In addition, the practical features in realization of IPE measurements are presented. Next, the approaches to characterization of electron states at interfaces are presented and illustrated by original experimental results (Chapters III and IV). This part is complemented by the analysis of (photo) injection methods aimed at characterization of localized states in thin layers of solids and at their interfaces (Chapters V-VIII). The band alignments at semiconductor (Chapter IX) and metal interfaces (Chapter X) are surveyed as well as behaviour of electrically active defects in thin dielectric films (Chapter XI) in relationship to development of high-permittivity insulator technology for the advanced electronic devices.
The Internal Photoemission Spectroscopy will serve as a practical guide for the researches in the field and also provide them with most up-to-date reference material concerning fundamental electronic properties of interfaces and thin sold films. It may also be used as introductory book for graduate students working on different aspects of spectroscopic characterization of interfaces or taking advanced courses on semiconductor physics and materials characterization.
Professor V. Afanas’ev devoted more than 25 years of research to development of novel experimental methods for interface characterization. In particular, a number of techniques based on internal photoemission phenomena were shown to provide unique information regarding electron states in thin films of solids and at their interfaces. In recent years these methods were successfully applied to characterize novel semiconductor heterostructures for advanced micro- and nano-electronic devices.
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- PublisherElsevier
- Publication date2018
- ISBN 10 0081015313
- ISBN 13 9780081015315
- BindingPaperback
- Edition number2
- Number of pages404
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