Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
"synopsis" may belong to another edition of this title.
Seller: Dorley House Books, Inc., Hagerstown, MD, U.S.A.
Hardcover. Condition: Near Fine. brown c w/gilt titles; 416 clean, unmarked pages/ndex. a technical publication that focuses on high-power silicon device fabrication, covering essential processes such as impurity diffusion, oxidation, and crystal defects under thermal equilibrium, tailored for high-power device physics. The text discusses key, evolving semiconductor fabrication technologies. Seller Inventory # 1253341
Seller: CONTINENTAL MEDIA & BEYOND, Ocala, FL, U.S.A.
Condition: Used: Very Good. 1981 hardcover no dust jacket as issued name in book Part B Supplement 2 clean crisp unmarked pages 297 pages out of print title M-11. Seller Inventory # 0713HCR1YOV
Seller: Saul54, Lynn, MA, U.S.A.
Hardcover. Condition: Fine. No Jacket. 1st Edition. Academic Press Inc., 1981. X+297 pages. AsNew Hardcover formerly belonged to "Charles Stark Draper Laboratory, Inc.", looks Unused. 9.25"x6.1"x0.8". be42. Seller Inventory # ABE-1709267625971