Covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application.
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This is the third edition of Pengelly's classic reference for all engineers involved in the development of solid state microwave devices.
The field effect transistor (FET) at microwave frequencies using the III-V compound gallium arsenide (GaAs) has been one of the most exiting devices to emerge from the solid state microwave community over the past twenty years. The field effect transistor has now become an established item in microwave systems of today in such applications as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. Indeed many microwave systems would not be possible at their present day performance levels if it were not for the unique solution that the FET offers in providing a reliable, reproducible and flexible device. In may cases costly prameter amplifiers have been replaced with compact, low-cost GaAs FET units whilst bulky trveling wave tubes with their associated large power supplies are giving way to power FET amplifiers albeit at lower power levels of up to 100W or so. This monograph attempts to give a comprehensive introduction to the theory, design and application of field effect transistors with most emphasis placed on gallium arsenide-based devices.
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