Principles & Technology of MODFETS V 2 (see 0-471-92995-6) (Design And Measurement in Electronic Engineering) - Hardcover

Morkoc, Hadis

Hardcover

ISBN 10: 0471929328 ISBN 13: 9780471929321

Publisher: Wiley, 1991

Synopsis

Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9. In Volume 2, Chapter 6 is devoted mainly to the experimental and technological aspects of two dimensional transport. Chapter 7 treats the two dimensional electron gas properties under the influence of external field, such as that found in MODFETs. Chapter 8 covers the particulars of MODFETs with respect to microwave/millimeter wave performance issues. Models for noise and equivalent circuit parameters as well as the performance of various MODFETs are discussed. Finally, Chapter 9 makes an attempt to cover the ever-evolving digital performance of MODFETs. Unlike the microwave/millimeter wave area, the choice of device for digital applications is not very clear and often application dependent. As a result, a great deal of effort is expended to compare MODFETs with other devices in several key application area along with projections. The data included in Chapters 8 and 9 are those obtained up to the middle of 1989.

About this title

About the Author

Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.

Edition details

• Publisher: Wiley
• Publication date: 1991
• ISBN 10: 0471929328
• ISBN 13: 9780471929321
• Binding: Hardcover
• Language: English
• Edition number: 1
• Number of pages: 266