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Principles & Technology of MODFETS V 2 (see 0-471-92995-6) (Design And Measurement in Electronic Engineering) - Hardcover
Synopsis
Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today.
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About the Author
Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.
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PRINCIPLES AND TECHNOLOGY OF MODFETs Volumes 1 and 2
Published by
John Wiley & Sons, England, 1991
ISBN 10: 0471929328
ISBN 13: 9780471929321
Used
Hardcover
First Edition
Seller: J. W. Mah, Burnaby, BC, Canada
Seller rating 5 out of 5 stars
Hardcover. Condition: Fine. 1st. (UK) Presumed 1st editions. Owner's name to inside front cover,no other markings, Fine; no dustjackets as published. Hardcovers (Desing and measurement in electronic engineering). Volume 1: xii, 1-262pp, then 8pp index, diagrams. Volume 2: xi, 263- 510, then 8pp index, graphs, diagrams. These texts explain the modulation doped field effect transistor: fundamentals, technology and performance of MODFETs in micorwave and digital devices. Volume 2 deals with experimental and technological aspects of 2-dimensional transport, the properties of 2-dimensional electron gas under the influences of an external field. The authors were with the Univeristy of Illinois at Urbana-Champaign. Two volumes. (3.5 JM 0815 Size: 8vo - over 7¾" - 9¾". Seller Inventory # 07200
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