Items related to Magnetic Memory: Fundamentals and Technology
Synopsis
If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.
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Book Description
If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies.
About the Author
Denny D. Tang is Vice President of MagIC Technologies, Inc., and has over 30 years' experience in the semiconductor industry. After receiving his Ph.D. in Electrical Engineering from The University of Michigan in 1975, he spent 15 years at IBM T.J. Watson Research Center, Yorktown Heights, 11 years at IBM Almaden Research Center at San José and 6 years at Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the IEEE, TSMC and the Industrial Technology Research Institute (ITRI).
Yuan-Jen Lee is a Senior Engineer at MagIC Technologies, Inc., where he develops advanced magnetic memory technology. He received his Ph.D. from the National Taiwan University in 2003, after which he worked for ITRI, Taiwan, developing toggle MRAM and spin-torque MRAM.
"About this title" may belong to another edition of this title.
- PublisherCambridge University Press
- Publication date2010
- ISBN 10 0521449642
- ISBN 13 9780521449649
- BindingHardcover
- LanguageEnglish
- Edition number1
- Number of pages208
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Magnetic Memory: Fundamentals and Technology
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Hardcover. Condition: new. Hardcover. If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Seller Inventory # 9780521449649
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Magnetic Memory: Fundamentals and Technology
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresis. Seller Inventory # 594745676
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Hardcover. Condition: new. Hardcover. If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9780521449649
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Magnetic Memory: Fundamentals and Technology
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