This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle tradeoffs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The internationally renowned authors highlight the interdependencies and trade-offs between practically important device parameters and discuss device scaling and scaling limits of CMOS and bipolar devices.
Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent twenty years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds thirteen US patents.
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