Strained-Si Heterostructure Field Effect Devices (Series in Materials Science and Engineering) - Hardcover

Maiti, C.K; Chattopadhyay, S; Bera, L.K

Hardcover

ISBN 10: 0750309938 ISBN 13: 9780750309936

Publisher: CRC Press, 2007

Synopsis

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS. After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs. From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field.

About this title

About the Author

C.K Maiti, S Chattopadhyay, L.K Bera

Edition details

• Publisher: CRC Press
• Publication date: 2007
• Language: English
• ISBN 10: 0750309938
• ISBN 13: 9780750309936
• Binding: Hardcover
• Edition number: 1
• Number of pages: 436