Contents
- Conference Committee
- Preface
- Introductory Remarks and Welcome
- Compound semiconductors, strained layer expitaxy and the information age, V. Narayanamurti, Sandia National Labs
- Impact of semiconductors on optoelectronic technology, P.R. Aigrain, Thomson-CSF
- Better materials, new applications, E. Spitz, Thomson-CSF
- Novel structures for high speed/high frequency optoelectronic devices and integrated circuits, L.F. Eastman, Cornell Univ.
- Device applications of resonant tunneling structures, G.I. Haddad, Imran Mehdi, Univ. of Michigan
- Quantum phenomena in microstructured semiconductors, K. von Klitzing, Max-Planck-Institut fur Festkorperforschung
- Relevance of low dimensional phenomena in intercalation compounds to microstructural semiconductors, M.S. Dresselhaus, G. Dresselhaus, Massachusetts Institute of Technology
- Organic materials for optoelectronics, C. Hilsum, GEC Hirst Research Ctr.
- Recent advances in active fibres, W.A. Gambling, Univ. of Southampton
- Flying by instruments: characterization and measurement of OEIC materials and structures, D.E. Aspnes, Bell Communications Research
- 1990 optoelectronics semiconductor materials issues, J.C.C. Fan, Kopin Corp.
- Semiconductor lasers: highlights and trends, J.P. Noblanc, Centre National d Etudes
- Optoelectronic integrated circuits, K. Oe, Nippon Telegraph and Telephone Corp.
- Progress in optoelectronic systems applications, K.J. Ebeling, Univ. of Ulm
- Optoelectronic device applications: potential outlook for the future, V. Graf, IBM Corp./Zurich Research Lab
- Contributors
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