Items related to Properties of Indium Phosphide
Synopsis
Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices.
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Review
"...presents the best available data on the properties of InP which may be used, for example, in the theoretical simulation of device characteristics." (International Journal of Electronics)
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Properties of Indium Phosphide
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Institution of Engineering and Technology, 1990
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
Published by
The Institution of Engineering and Technology, 1990
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
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ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
Published by
The Institution of Engineering and Technology, 1990
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
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ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
Published by
The Institution of Engineering and Technology, 1990
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
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INSTITUTION OF ENGINEERING & T, 1990
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Condition: New. KlappentextrnrnIndium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties se. Seller Inventory # 898919065
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Properties of Indium Phosphide
Published by
Institution of Engineering and Technology, 1990
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
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Institution Of Engineering And Technology, 1991
ISBN 10: 086341642X
ISBN 13: 9780863416422
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Properties of Indium Phosphide
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Institution Of Engineering & Technology Dez 1990, 1990
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Taschenbuch. Condition: Neu. Neuware - Indium Phosphide is second only to Gallium Arsenide as a candidate material for improved devices. This volume, containing some 130 datareviews by over fifty authors from around the world, includes coverage of: basic properties; selected InGAs and InGaAsP properties; defects and their detection; surfaces; interfaces; oxidation; etching; ion implantation; and exploitation in devices. Seller Inventory # 9780863416422
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