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CMOS Gate-Stack Scaling ― Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings) - Hardcover
Synopsis
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
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Cmos Gate-stack Scaling Materials, Interfaces and Reliability Implications : Symposium Held April 14-16, 2009, San Francisco, California, U.s.a.
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CMOS Gate-Stack Scaling ? Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
Published by
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ISBN 10: 1605111287
ISBN 13: 9781605111285
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Cmos Gate-stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155
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Materials Research Society, 2009
ISBN 10: 1605111287
ISBN 13: 9781605111285
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Demkov, Alexander A. (Freescale Semiconductor Inc., Austin, Texas); Taylor, Bill; Harris, H. Rusty; Butterbaugh, Jeffery W.; Rachmady, Willy. Series: MRS Proceedings. Num Pages: 194 pages, Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 13. Weight in Grams: 430. . 2009. Hardback. . . . . Seller Inventory # V9781605111285
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CMOS Gate-Stack Scaling ? Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
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ISBN 10: 1605111287
ISBN 13: 9781605111285
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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155
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ISBN 10: 1605111287
ISBN 13: 9781605111285
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Cmos Gate-stack Scaling Materials, Interfaces and Reliability Implications : Symposium Held April 14-16, 2009, San Francisco, California, U.s.a.
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Cmos Gate-Stack Scaling-- Materials, Interfaces and Reliability Implications
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Cmos Gate-stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155
Published by
Materials Research Society, 2009
ISBN 10: 1605111287
ISBN 13: 9781605111285
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Hardcover
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Demkov, Alexander A. (Freescale Semiconductor Inc., Austin, Texas); Taylor, Bill; Harris, H. Rusty; Butterbaugh, Jeffery W.; Rachmady, Willy. Series: MRS Proceedings. Num Pages: 194 pages, Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 13. Weight in Grams: 430. . 2009. Hardback. . . . . Books ship from the US and Ireland. Seller Inventory # V9781605111285
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Cmos Gate-stack Scaling Materials, Interfaces and Reliability Implications: Symposium Held April 14-16, 2009, San Francisco, California, U.s.a.: Vol 1155
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ISBN 10: 1605111287
ISBN 13: 9781605111285
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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.KlappentextThe MRS Symposium Proceeding series is an internationally recognised reference suitable for research. Seller Inventory # 448148207
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