Compact Modeling for MOSFET Devices: Small-Signal Models for Multiple-Gate Transistors

 
9783639148824: Compact Modeling for MOSFET Devices: Small-Signal Models for Multiple-Gate Transistors

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

"synopsis" may belong to another edition of this title.

About the Author:

Oana Moldovan; PhD. in Electronics Engineering from Universitat Rovira i Virgili, Spain. Postdoctoral researcher at the Universitat Aut˛noma de Barcelona. Benjamin I˝iguez; PhD. in Physics from the University of the Balearic Islands, Spain. Titular Professor in the Department of Electronic Engineering, Universitat Rovira i Virgili, Spain.

"About this title" may belong to another edition of this title.

Buy New View Book
List Price: US$ 80.00
US$ 59.45

Convert Currency

Shipping: US$ 7.92
From United Kingdom to U.S.A.

Destination, Rates & Speeds

Add to Basket

Top Search Results from the AbeBooks Marketplace

1.

Oana Moldovan
Published by VDM Verlag 2009-05-19 (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New paperback Quantity Available: > 20
Seller:
Blackwell's
(Oxford, OX, United Kingdom)
Rating
[?]

Book Description VDM Verlag 2009-05-19, 2009. paperback. Book Condition: New. Bookseller Inventory # 9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 59.45
Convert Currency

Add to Basket

Shipping: US$ 7.92
From United Kingdom to U.S.A.
Destination, Rates & Speeds

2.

Moldovan, Oana
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Quantity Available: 1
Seller:
Rating
[?]

Book Description Book Condition: New. Publisher/Verlag: VDM Verlag Dr. Müller | Small-Signal Models for Multiple-Gate Transistors | Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators.We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs. | Format: Paperback | Language/Sprache: english | 218 gr | 152 pp. Bookseller Inventory # K9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 71.03
Convert Currency

Add to Basket

Shipping: US$ 3.52
From Germany to U.S.A.
Destination, Rates & Speeds

3.

Oana Moldovan
Published by VDM Verlag (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Quantity Available: > 20
Print on Demand
Seller:
Pbshop
(Wood Dale, IL, U.S.A.)
Rating
[?]

Book Description VDM Verlag, 2009. PAP. Book Condition: New. New Book. Shipped from US within 10 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bookseller Inventory # IQ-9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 74.55
Convert Currency

Add to Basket

Shipping: US$ 3.99
Within U.S.A.
Destination, Rates & Speeds

4.

Moldovan, Oana
Published by VDM Verlag (2016)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Paperback Quantity Available: 1
Print on Demand
Seller:
Ria Christie Collections
(Uxbridge, United Kingdom)
Rating
[?]

Book Description VDM Verlag, 2016. Paperback. Book Condition: New. PRINT ON DEMAND Book; New; Publication Year 2016; Not Signed; Fast Shipping from the UK. No. book. Bookseller Inventory # ria9783639148824_lsuk

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 74.00
Convert Currency

Add to Basket

Shipping: US$ 5.11
From United Kingdom to U.S.A.
Destination, Rates & Speeds

5.

Oana Moldovan
Published by VDM Verlag (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Quantity Available: > 20
Print on Demand
Seller:
Books2Anywhere
(Fairford, GLOS, United Kingdom)
Rating
[?]

Book Description VDM Verlag, 2009. PAP. Book Condition: New. New Book. Delivered from our UK warehouse in 3 to 5 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bookseller Inventory # LQ-9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 67.93
Convert Currency

Add to Basket

Shipping: US$ 11.89
From United Kingdom to U.S.A.
Destination, Rates & Speeds

6.

Oana Moldovan
Published by VDM Verlag (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Paperback Quantity Available: 1
Print on Demand
Seller:
Ergodebooks
(RICHMOND, TX, U.S.A.)
Rating
[?]

Book Description VDM Verlag, 2009. Paperback. Book Condition: New. This item is printed on demand. Bookseller Inventory # DADAX3639148827

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 81.42
Convert Currency

Add to Basket

Shipping: US$ 3.99
Within U.S.A.
Destination, Rates & Speeds

7.

Oana Moldovan
Published by VDM Verlag (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Paperback Quantity Available: 1
Seller:
Irish Booksellers
(Rumford, ME, U.S.A.)
Rating
[?]

Book Description VDM Verlag, 2009. Paperback. Book Condition: New. book. Bookseller Inventory # M3639148827

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 86.57
Convert Currency

Add to Basket

Shipping: FREE
Within U.S.A.
Destination, Rates & Speeds

8.

Oana Moldovan
Published by VDM Verlag Mai 2009 (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Taschenbuch Quantity Available: 2
Seller:
Rheinberg-Buch
(Bergisch Gladbach, Germany)
Rating
[?]

Book Description VDM Verlag Mai 2009, 2009. Taschenbuch. Book Condition: Neu. Neuware - Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs. 152 pp. Englisch. Bookseller Inventory # 9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 71.53
Convert Currency

Add to Basket

Shipping: US$ 20.18
From Germany to U.S.A.
Destination, Rates & Speeds

9.

Oana Moldovan
Published by VDM Verlag Mai 2009 (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Taschenbuch Quantity Available: 2
Seller:
Agrios-Buch
(Bergisch Gladbach, Germany)
Rating
[?]

Book Description VDM Verlag Mai 2009, 2009. Taschenbuch. Book Condition: Neu. Neuware - Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs. 152 pp. Englisch. Bookseller Inventory # 9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 71.53
Convert Currency

Add to Basket

Shipping: US$ 20.18
From Germany to U.S.A.
Destination, Rates & Speeds

10.

Moldovan, Oana
Published by VDM Verlag (2009)
ISBN 10: 3639148827 ISBN 13: 9783639148824
New Paperback Quantity Available: 10
Print on Demand
Seller:
Ergodebooks
(RICHMOND, TX, U.S.A.)
Rating
[?]

Book Description VDM Verlag, 2009. Paperback. Book Condition: New. This item is printed on demand. Bookseller Inventory # INGM9783639148824

More Information About This Seller | Ask Bookseller a Question

Buy New
US$ 94.30
Convert Currency

Add to Basket

Shipping: US$ 3.99
Within U.S.A.
Destination, Rates & Speeds

There are more copies of this book

View all search results for this book